NTR1P02T1G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTR1P02T1G
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 400 mW -20 V Continuous Drain Current (ID):1 A 2.5 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -20 V |
| Length | 2.9 mm |
| Width | 1.3 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 148 MΩ |
| Height | 940 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -1 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 400 mW |
| Power Dissipation | 400 mW |
| Threshold Voltage | -1.9 V |
| Number of Channels | 1 |
| Input capacitance | 165 pF |
| Continuous Drain Current (ID) | 1 A |
| Rds On Max | 180 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 7 ns |
| Turn-Off Delay Time | 9 ns |
| Element Configuration | Single |
| Fall Time | 9 ns |
| Rise Time | 9 ns |
| Gate Charge | 2.5 nC |
| Drain to Source Resistance | 148 mΩ |
| Nominal Vgs | -1.9 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 1.1 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 1526
Distributors
pcbx
pcbxUnit Price$0.10032
Ext.Price$0.10032
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.10032 | $0.10032 |
| 10 | $0.08946 | $0.89460 |
| 50 | $0.07978 | $3.98900 |
| 100 | $0.07060 | $7.06000 |
| 500 | $0.06247 | $31.23500 |
| 1000 | $0.05959 | $59.59000 |
| 3000 | $0.05684 | $170.52000 |
| 5000 | $0.05370 | $268.50000 |